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Person Profile

SERGEY GAGARSKIY 

 

DATE OF BIRTH:

June 07 1961

PLACE OF BIRTH:

ARKHANGELSK,Russian Federation.

PERMANENT HOME ADDRESS:

13/2 Prospekt Hudognikov app. 9, St. Petersburg, 190000 Russia

phone:   +7-812-5105601;

PERMANENT WORK ADDRESS:

49 Kronverkiy Prospekt, 197101

St. Petersburg, National  University of Information Technologies, Mechanics and Optics

/ ITMO UNIVERSITY /

phone:   +7-812-5954127;

fax:        +7-812-3157133

e-mail:  s.gagarsky@mail.ru

TRAVEL PASSPORT DATA:

Current:71N1320461  issued 13.07.2010 by FMC 78038,St Petersburg, Russia, date of expiry 13.07.2020

CITIZENSHIP:

Russian Federation

EDUCATION:

Candidate of Science (equivalent of Ph.D. degree) in Physics and Mathematics, the Institute of Fine Mechanics and Optics, St.Petersburg, Russia, certificate KT N0004333, issued 08.07.1999. Thesis: “Control of Radiation Parameters of Pulsed Solid-state Raman Lasers Based on the Polyfunctional Non-linear Media”.

Diploma (equivalent of M.S. Degree) in Optics and Optoelectronics (specialization ‘Quantum Electronics’), the Institute of Fine Mechanics and Optics, Leningrad, USSR, certificate  3B NO 282224 issued 14.06.1984. Thesis: "Research of Nonlinear Scattering in Heterogeneous Media".

EMPLOYMENT

Senior Scientist, Laser Technologies and Laser Technics Department, ITMO UNIVERSITY, St.Petersburg, Russian Federation, 1999-present time.

Scientist, Quantum Electronics Department, the Institute of Fine Mechanics and Optics, Leningrad, USSR, 1985-1999.

Optical Engineer, Quantum Electronics Department, the Institute of Fine Mechanics and Optics, Leningrad, USSR, 1984-1985.

PROFESSIONAL EXPERIENCE

Optical engineer and researcher with experience in

·       Light-matter interaction

·       Solid-state laser devices for technology and medicine

·       Optical sources of ultra short pulses,

·       Nonlinear optics,

·       Laser spectroscopy with high temporal resolution

ABROAD PROFESSIONAL TRAINING

 

Invited scientist at the R&D Department of DDC Technologies, NY, USA,  July-Sept. 2012

Invited scientist at the R&D Department of Vitro Laser GmbH, Minden, Germany, 2004, 2008 - 2011 (V&E Mitarbeiter)

Guest-research work at the Vitro Laser GmbH, Minden, Germany, April 2002-May 2004.

Guest-research work at the Institute of Physical and Theoretical Chemistry (Technical University of Muenchen), Germany, December 1997 - March1998,July 2000 – April 2002.

Guest-research work at the Korean Institute of Science and Technology, Seoul, 1999.

Guest-research work at CILAS company (group AEROSPATIALE), Paris, France; April 1996, September 1997, March 1998.

Guest-research work at the Sofia University Kliment Okhridski, Sofia, Bulgaria;  August-September 1989, January1990, August 1995. August-Sept. 2012.

Guest-research at the Institute of Electronics, Sofia, Bulgaria; 1987.

LANGUAGES

Russian (native), English (fluent), Bulgarian (fluent), German (moderately)

PUBLICATIONS

Full list includes more than 40 positions (will be provided under request)

CONFERENCE PRESENTATIONS

includes 46 positions (will be provided under request)

EXHIBITIONS

Includes 8 positions (will be provided under request)

PATENTS                                                                                                     

Includes 4 positions (will be provided under request)

GRANTS RUS 08/B11 FASIE-BmbF 2008-2009 Development of the diode-pumped lasers for ophthalmology 

Publications

  1. 2Ayt A.O., Barachevsky V.A., Duensing A., Fomicheva Y.Y., Gagarskiy S.V., Iglev H., Kiyko V.V., Krayushkin M.M., Sergeev A.N., Veniaminov A.V., Zakharov V.V. Thresholds for nonlinear recording of fluorescent centers in chromone-doped polymer films // Optical and Quantum Electronics - 2017, Vol. 49, No. 2, pp. 72 [IF: 1.055, SJR: 0.467]
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  2. 1Gnatyuk V.A., Vlasenko O.I., Levytskyi S.N., Aoki T., Mizeikis V., Gagarsky S.V., Zelenska K.S., Gnatyuk D.V. Capabilities of Laser-Induced Marks as Information Carriers Created in Different Materials // Journal of Laser Micro Nanoengineering - 2016, Vol. 11, No. 2, pp. 164-169 [IF: 0.763, SJR: 0.198]
    more >>